CRYSTAL STRUCTURE OF THE TERNARY SEMICONDUCTOR Cu2GeSe4

Authors

  • Gerzon E. Delgado Laboratorio de Cristalografía, Departamento de Química, Facultad de Ciencias, Universidad de Los Andes, Mérida, Venezuela
  • Jines E. Contreras Laboratorio de Cristalografía, Departamento de Química, Facultad de Ciencias, Universidad de Los Andes, Mérida, Venezuela
  • Gustavo Marcano Laboratorio de Cristalografía, Departamento de Química, Facultad de Ciencias, Universidad de Los Andes, Mérida, Venezuela
  • Carlos Rincón Centro de Estudios de Semiconductores, Departamento de Fí­sica, Facultad de Ciencias, Universidad de Los Andes, Mérida, Venezuela
  • Luis Nieves Centro de Estudios de Semiconductores, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101, Venezuela.

Abstract

The ternary semiconductor compound Cu2GeSe4 has been characterized by means of X-ray powder diffraction and refined by the Rietveld method. This compound crystallizes in the cubic system, space group F 4 3m (Nº 216), Z = 1, with unit cell parameters a = 5.5815(3) Å and V = 173.88 (3) Å3. The refinement of 10 instrumental and structural parameters converged to the  figures of  merit Rp=  4.4%,  Rwp= 6.8%, Rexp= 5.5%, RB= 6.0% and  S= 1.2  for 4001 step  intensities and 28 independent  reflections.  The  Cu2GeSe4  structure  can  be  described  as  derivative of  the zincblende  where Zn  atoms  are replaced by Cu and Ge atoms, and cationic vacancies.

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Published

2014-02-17

How to Cite

Delgado, G. E., Contreras, J. E., Marcano, G., Rincón, C., & Nieves, L. (2014). CRYSTAL STRUCTURE OF THE TERNARY SEMICONDUCTOR Cu2GeSe4. LatinAmerican Journal of Metallurgy and Materials, 34–38. Retrieved from https://www.rlmm.org/ojs/index.php/rlmm/article/view/522

Issue

2015, 35(1)

Section

Regular Articles

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