STRUCTURAL AND MORPHOLOGICAL PROPERTIES OF BI(X)SI(Y)O(Z) THIN FILMS PREPARED VIA UNBALANCED MAGNETRON SPUTTERING
DOI:
https://doi.org/10.5281/zenodo.10420316Abstract
Bismuth-silicon-oxygen-based thin films were prepared via an unbalanced magnetron sputtering system in a reactive atmosphere with a mixture of argon and oxygen at room temperature. It is clear that this technique is highly environmentally friendly and does not produce toxic products or gases during or after the process. These films exhibited high homogeneity and constant thickness around 200 nm. The structural properties of the films were analyzed by means of X-ray diffraction, which mainly showed the presence of bismuth and bismuth oxide. As for the morphological properties, con-focal microscopy measurements showed good homogeneity over the surface as well as low average roughness, which indicates good thickness uniformity.Downloads
Download data is not yet available.
Downloads
Published
2015-01-28
How to Cite
Orozco Hernández, G., & Olaya Flórez, J. J. (2015). STRUCTURAL AND MORPHOLOGICAL PROPERTIES OF BI(X)SI(Y)O(Z) THIN FILMS PREPARED VIA UNBALANCED MAGNETRON SPUTTERING. LatinAmerican Journal of Metallurgy and Materials, 237–241. https://doi.org/10.5281/zenodo.10420316
Issue
Section
Regular Articles
License
The authors of papers accepted for publication by the RLMM, should recognize the complete transfer of copyright (in all languages) to the RLMM. This transfer includes the right by the RLMM to adapt the article for digital or printed reproduction without altering the written content and information displayed in tables or figures within. The authors retain the copyright and guarantee the journal the right to be the first publication of the work as well as licensed under a Creative Commons Attribution License 4.0 Internacional (CC BY 4.0) which allows others to share the work with an acknowledgment of the authorship of the work and the initial publication in this journal.
