EFFECT OF CERIO INSERTION ON THE STRUCTURAL, ELECTROCHEMICAL AND OPTICAL PROPERTIES OF MoO3 THIN FILMS

Abstract

Cerium-doped  MoO3  thin  films  were  grown  through  spray  pyrolysis  using  (NH4)6Mo7O24.4H2O  0.1  M  solution.  The doping was performed by adding 0.1M CeCl3.7H2O, in a ratio of 2% by volume. X-ray and Auger electron spectra show of Ce  incorporation  in  MoO3  thin  film.  X-ray  diffraction  showed  that  Cerium  insertion  destroys  the  α-MoO3  structure observed in undoped films. The electrochemical properties were studied using the cyclic voltammetry technique with -400 to 400 mV and scanning speeds from 16 to 144 mV/s. It was established that the diffusion coefficient varies from 1.06 x 10-10cm2/s for the undoped film to 3.49 x 10-10 cm2/s for doped film. This suggests that the doped film favors ion exchange processes. The optical transmittance in the range of 290-2500 nm showed that the light transmission of the film doped with Cerium is higher by 10% compared to the undoped film.