PROPIEDADES FOTOLUMINISCENTES DE PELÍCULAS ZNO: A-SIOX OBTENIDAS POR LA TÉCNICA CVD ASISTIDO POR FILAMENTO CALIENTE

Authors

  • Roberto López Ramírez Centro de investigaciones en dispositivos semiconductores Puebla México
  • Tomás Díaz Becerril Centro de investigaciones en dispositivos semiconductores Puebla México
  • Enrique Rosendo Andrés Centro de investigaciones en dispositivos semiconductores Puebla México
  • Godofredo Garcí­a Salgado Centro de investigaciones en dispositivos semiconductores Puebla México
  • Antonio Coyopol Centro de investigaciones en dispositivos semiconductores Puebla México
  • Héctor Juárez Centro de investigaciones en dispositivos semiconductores Puebla México

Abstract

The current interest in materials consisting of more than one component, has increased in recent years due to the properties they present. In this work, we carried out a study of photoluminescent properties of ZnO: a-SiOx composites. To obtain the material, hot filament chemical vapor deposition (HFCVD) technique was employed in a temperature range of 900-1100 °C. We include a solid source of quarts (SiO2) in the growth environment, to study its effect on deposited films properties. Structural characterization by X-ray diffraction (XRD) and infrared spectroscopy (FTIR), indicated that the phases ZnO and a-SiOx coexist regardless of the deposit temperature, although this parameter is decisive in the dominant photoluminescent emission phase

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Published

2010-11-15

How to Cite

López Ramírez, R., Díaz Becerril, T., Rosendo Andrés, E., Garcí­a Salgado, G., Coyopol, A., & Juárez, H. (2010). PROPIEDADES FOTOLUMINISCENTES DE PELÍCULAS ZNO: A-SIOX OBTENIDAS POR LA TÉCNICA CVD ASISTIDO POR FILAMENTO CALIENTE. LatinAmerican Journal of Metallurgy and Materials, 59–63. Retrieved from https://www.rlmm.org/ojs/index.php/rlmm/article/view/80

Issue

2011, 31(1)

Section

Regular Articles

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