EFECTOS DE LA IRRADIACIÓN CON HAZ DE IONES EN PELÍCULAS DELGADAS DE ZnO CRECIDAS POR MEDIO DE EROSIÓN IÓNICA

Abstract

This work presents the characterization of the effects generated in ZnO thin films by irradiating them with silicon ions at energies of 6, 8 and 10 MeV. The ZnO films with thickness between 100 to 400 nm were produced by RF-magnetron sputtering on silicon and high purity silica substrates. After being grown, some films were heated at 500ºC in air during one hour and every sample was irradiated by Si ions. From the Rutherford Backscattering Spectroscopy (RBS) analysis, the compound 1:1 stoichiometry was maintained for all samples after the thermal treatments and ion irradiations. The X- ray diffraction indicates that the as deposited films have a preferential grown <002> and this direction is altered by the irradiations. The optical absorptions for the annealing films show a small increment at 355 nm wavelength, moreover for the films irradiated with Si at 10 MeV present a diminution of 50% due to thin film thickness lost during irradiation treatment.